Accession Number : AD0477033


Title :   STUDY OF TRANSIENT RADIATION EFFECTS ON MICROELECTRONICS. VOLUME II: FLIP-FLOP STUDY, AMPLIFIER STUDY, SUPPLEMENTARY CIRCUIT INVESTIGATION, CONCLUSIONS AND RECOMMENDATIONS.


Descriptive Note : Final rept. Jan-Jul 65,


Corporate Author : NORTRONICS NEWBURY PARK CA APPLIED RESEARCH DEPT


Personal Author(s) : Raymond, James P ; Steele, Edward J ; Lawrence, Elliot G ; Chang, William W


Report Date : Dec 1965


Pagination or Media Count : 183


Abstract : The transient radiation effects in 17 circuit types were experimentally studied in detail. Conclusions regarding the vulnerability of each circuit type were presented in the previous discussions. The overall conclusion might be that the circuit design is the most important consideration in the circuit vulnerability with the specific circuit fabrication technique closely following. Optimum circuit design will include the widest allowable margin for transistor neutron-induced gain degradation and a trade-off between the ionizing-radiation compensation and turn-on transistor photocurrents. Observed transient responses in the p-n junction isolation circuits were substantially greater than the responses observed in the passive substrate or polycrystalline-oxide isolation circuits. For identical circuits the low level ionizing radiation response would be the greatest for the monolithic-chip circuit followed by the compatible thin-film, polycrystalline-oxide, multiple-chip and thin-film hybrid in order of decreasing response. With the exception of the monolithic response, the relative circuit response between types will be dominated by the specific circuit characteristics. (Author)


Descriptors :   *MICROELECTRONICS , *RELAXATION OSCILLATORS , DAMAGE , VULNERABILITY , DEGRADATION , TRANSISTOR AMPLIFIERS , OXIDES , FAILURE(ELECTRONICS) , GATES(CIRCUITS) , GATES(CIRCUITS)


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE