Accession Number : AD0477032


Title :   STUDY OF TRANSIENT RADIATION EFFECTS ON MICROELECTRONICS. VOLUME I: INTRODUCTION, EXPERIMENTAL STUDY, DIGITAL LOGIC GATE STUDY.


Descriptive Note : Final rept. Jan-Jul 65,


Corporate Author : NORTRONICS NEWBURY PARK CA APPLIED RESEARCH DEPT


Personal Author(s) : Raymond, James P ; Steele, Edward J ; Lawrence, Elliott G ; Chang, William W


Report Date : Dec 1965


Pagination or Media Count : 220


Abstract : The purpose was to compare microcircuits of differing construction techniques to determine their relative vulnerability, to study basic radiation-induced failure mechanisms, and to relate these mechanisms to both construction technique and circuit design. Test specimens were of three basic circuit types of five different fabrication techniques. Circuit types included digital logic gates, flip-flops, and differential or digital sense amplifiers. Fabrication techniques represented monolithic, multiple-chip, thin film compatible, oxide-isolation, and thin-film hybrid. Experimental study consisted of determining the electrical circuit performance parameters, the transient response in pulsed ionizing radiation environments, and permanent degradation from exposure to a pulsed reactor neutron/gamma environment. Failure mechanisms were, when possible, related analyticall, to the characteristics of the circuit and the fabrication technique. (Author)


Descriptors :   *MICROELECTRONICS , *GATES(CIRCUITS) , DAMAGE , FAILURE(ELECTRONICS) , RELAXATION OSCILLATORS , TRANSISTOR AMPLIFIERS , NEUTRON FLUX , VOLTAGE , DEGRADATION , VULNERABILITY , OXIDES , OXIDES


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE