Accession Number : AD0476408


Title :   EXPLORATORY DEVELOPMENT OF THE Q-FACTOR TECHNIQUE.


Descriptive Note : Final rept. Feb 64-Aug 65,


Corporate Author : BENDIX RESEARCH LABS SOUTHFIELD MI


Personal Author(s) : Frank, Max


Report Date : Dec 1965


Pagination or Media Count : 126


Abstract : Accurate prediction of transistor gain degradation in neutron radiation was demonstrated. The technique requires precise knowledge of the transistor physical characteristics, the radiation exposure, and the damage constant of the semiconductor material which is dependent on the irradiation and measurement levels of current and temperature. The 2N1613 transistor was studied first under various irradiation and measurement conditions to determine the important variables and their behavior. In a subsequent test 20 silicon transistor types from different manufacturers and of different constructions were irradiated for the purpose of examining the consistency of the damage. At normal operating currents, differences in gain degradation characteristics between the devices were correlated by electrical measurements of base transit time and forward VBE-Ic characteristics. Accurate radiation exposure measurements were made by comparing the transistor damage effect in the unknown environment with the damage rate obtained in a reference nuclear spectrum for the same transistor, irradiation, and measurement conditions. (Author)


Descriptors :   *TRANSISTORS , *DAMAGE , ELECTRIC CURRENT , RADIATION EFFECTS , MEASUREMENT , TEMPERATURE , ANNEALING , VOLTAGE , GAIN , DEGRADATION , MATHEMATICAL PREDICTION , GAMMA RAYS , X RAYS , NEUTRONS , RADIATION MEASURING INSTRUMENTS , SILICON , SILICON


Subject Categories : Radioactiv, Radioactive Wastes & Fission Prod


Distribution Statement : APPROVED FOR PUBLIC RELEASE