Accession Number : AD0475250
Title : ION IMPLANTATION JUNCTION TECHNIQUES.
Descriptive Note : Quarterly technical progress rept. no. 4, 16 Aug-15 Nov 65,
Corporate Author : ION PHYSICS CORP BURLINGTON MA
Personal Author(s) : King, W. J. ; Burrill, J. T. ; Surette, J. L. ; Harrison, S. ; Quintal, B. S.
Report Date : 15 NOV 1965
Pagination or Media Count : 24
Abstract : This program is directed at increasing state-of-the-art efficiency of solar cells produced by ion implantation techniques and at fabrication of thin film silicon solar cells by plasma deposition. In the single-crystal program, the semi-production apparatus underwent extensive debugging and is now operational for cell production. Six panels for flight evaluation of cell performance were completed. Investigations have continued on optimizing cell efficiencies, both in lopex and dendritic material, on radiation damage studies and on improved cell configurations. Notable results have been achieved for an integral cover-slip configuration, with 1 mil thick fused SiO2 layers being successfully applied. Work on the thin film cells has been terminated since it has been demonstrated that a long-term development program would be required to produce competitive cells by the plasma deposition method. Alternative methods such as thin single-crystal cells now look more promising as a means of achieving high power to weight ratios. (Author)
Descriptors : , , (*SOLAR CELLS, IONS), SILICON, FILMS, SINGLE CRYSTALS, SILICON COMPOUNDS, OXIDES, SEMICONDUCTOR DEVICES, DAMAGE, RADIATION EFFECTS, DEGRADATION, INSTRUMENTATION, PERFORMANCE(ENGINEERING), HIGH TEMPERATURE, COATINGS, THERMAL EXPANSION, ELECTRONS.
Subject Categories : ELECTRIC POWER PRODUCTION AND DISTRIBUTION
Distribution Statement : APPROVED FOR PUBLIC RELEASE