Accession Number : AD0474691


Title :   EFFECT OF ELECTRON-HOLE RECOMBINATION PROCESSES ON SEMICONDUCTOR REFLECTIVITY MODULATION.


Descriptive Note : Technical documentary rept.,


Corporate Author : AEROSPACE CORP EL SEGUNDO CA LAB OPERATIONS


Personal Author(s) : Birnbaum, Milton ; Stocker, Tom L


Report Date : Sep 1965


Pagination or Media Count : 17


Abstract : The increases in the reflectivity of germanium, silicon, GaAs, GaSb, InAs, InSb, CdTe, and CdSe have been observed by use of a ruby laser to produce the electron-hole plasma that is responsible for the reflectivity changes and to probe the reflectivity changes. Observations were made with the ruby laser light incident at the pseudo-Brewster angle in order to measure small increases in reflectivity. In the case of the III-V and II-VI semiconductors, the increase in reflectivity was found to exhibit a linear dependence when plotted as a function of the square root of the incident light intensity. Germanium and silicon exhibited a linear dependence of the increase in reflectivity on the incident light intensity. These results agree with the calculated dependence that ascribes the differences between the two groups of semiconductors to the fact that the recombination of electrons and holes is a direct process in the III-V and II-VI compounds and in germanium and silicon occurs mainly by trapping of the free carriers at impurity centers. (Author)


Descriptors :   *REFLECTIVITY , *SEMICONDUCTORS , GERMANIUM , SILICON , GALLIUM ALLOYS , ARSENIC ALLOYS , ANTIMONY ALLOYS , INDIUM ALLOYS , CADMIUM ALLOYS , ELECTRONS , LASERS , RUBY , MODULATION , PLASMAS(PHYSICS)


Subject Categories : Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE