Accession Number : AD0467489


Title :   SURFACE STATES AND BARRIER HEIGHT IN METAL-SEMICONDUCTOR SURFACE BARRIER DIODES.


Descriptive Note : Technical rept.,


Corporate Author : STANFORD UNIV CA STANFORD ELECTRONICS LABS


Personal Author(s) : Cowley, A M


Report Date : May 1965


Pagination or Media Count : 187


Abstract : Metal-semiconductor surface barrier diodes were investigated from the standpoint of the mechanism for the formation of the potential barrier at the metal-semiconductor interface and the measurement of the barrier height. The dependence of the barrier height of metal-semiconductor systems upon the metal work function was derived with the following assumptions: (1) The contact between the metal and the semiconductor has an interfacial layer of the order of atomic dimensions; it was further assumed that this layer is transparent to electrons with energy greater than the potential barrier, but can withstand potential across it. (2) The surface state density (per unit area per electron volt) at the interface is a property only of the semiconductor surface and is independent of the metal. Several models for describing the bias behavior of the MOS structure with surface states are also discussed. For thin interfacial layers, the model which specifies that the surface states charge is independent of bias seems to best describe the variation of the depletion capacitance with voltage for GaPand Si diodes. (Author)


Descriptors :   *SEMICONDUCTOR DIODES , SURFACE PROPERTIES , ELECTRONS , ENERGY , ATOMIC ENERGY LEVELS , GALLIUM ALLOYS , PHOSPHORUS ALLOYS , STATIC ELECTRICITY , DIFFUSION , EMISSIVITY , JOINTS , DISTRIBUTION , ELECTRON DENSITY , EXPERIMENTAL DATA , SILICON , SULFIDES , ARSENIC ALLOYS


Distribution Statement : APPROVED FOR PUBLIC RELEASE