Accession Number : AD0464777


Title :   SILICON CARBIDE FOR SEMICONDUCTORS


Corporate Author : REDSTONE SCIENTIFIC INFORMATION CENTER REDSTONE ARSENAL AL


Personal Author(s) : Caras, Gus J


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/464777.pdf


Report Date : 26 Feb 1965


Pagination or Media Count : 207


Abstract : This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing single crystals of sufficient size and purity for semiconductor applications. Of the various methods of growing silicon carbide, growth by sublimation appears to be the most successful method. There is considerable variation in the properties of silicon carbide as reported in the literature, mainly because most measurements were conducted on crystals with varying amounts and types of impurities. In the area of devices, rectifiers capable of 500 C operation and unipolar transistors exhibiting power gain at temperatures greater than 500 C have been fabricated. Other devices which have received attention include diodes, photoelectric and electroluminescent devices, and electron emission components.


Descriptors :   *EPITAXIAL GROWTH , *SEMICONDUCTOR DEVICES , *SILICON CARBIDES , ELECTROLUMINESCENCE , BIBLIOGRAPHIES , OPTICAL ANALYSIS , CRYSTAL GROWTH , TRANSISTORS , ETCHED CRYSTALS , RECTIFIERS , FURNACES , LUMINESCENCE , SUBLIMATION , IMPURITIES , GRAPHITE , REFRACTIVE INDEX


Subject Categories : Electric Power Production and Distribution


Distribution Statement : APPROVED FOR PUBLIC RELEASE