Accession Number : AD0458662
Title : DEPOSITION OF SILICON ON INSULATING SUBSTRATES.
Descriptive Note : Scientific rept. no. 1, 1 Jul-31 Dec 64,
Corporate Author : WESTINGHOUSE RESEARCH LABS PITTSBURGH PA
Personal Author(s) : Chu, T. L. ; Gruber, G. A. ; Oberly, J. J. ; Tallman, R. L.
Report Date : 22 JAN 1965
Pagination or Media Count : 59
Abstract : The pyrolysis of silane and the vacuum evaporation of silicon have been used for the deposition of silicon films on various substrates. These techniques could minimize autodoping and diffusion effects. Silicon films have been deposited on oriented silicon, sapphire, and hexagonal silicon carbide substrates by the pyrolysis of silane in a flow system using hydrogen as a diluent. Silicon films deposited on silicon substrates were of good crystal perfection. Silicon films deposited on sapphire and silicon carbide substrates were found to be epitaxial with respect to the substrates. Epitaxial silicon films of a few hundred Angstroms thickness were also deposited on silicon carbide substrates by vacuum evaporation. Exploration of new substrate materials, particularly those in the form of films deposited on silicon and other substrates, has been carried out. Thorium dioxide films have been deposited epitaxially on oriented silicon and fluorite substrates by vacuum evaporation. Silicon nitride films have been deposited on silicon substrate by nitridation and reactive sputtering. (Author)
Descriptors : , (*EPITAXIAL GROWTH, SILICON), (*VAPOR PLATING, SILICON), (*SILICON, VAPOR PLATING), PYROLYSIS, THORIUM COMPOUNDS, DIOXIDES, SAPPHIRE, SILANES, SILICON COMPOUNDS, NITRIDES, CARBIDES, METAL FILMS, CRYSTAL LATTICES, SEMICONDUCTING FILMS, EVAPORATION, VACUUM, SPUTTERING.
Distribution Statement : APPROVED FOR PUBLIC RELEASE