Accession Number : AD0458541


Title :   OXIDE SEMICONDUCTOR MATERIALS AND DEVICE RESEARCH.


Descriptive Note : Rept. no. 12 (Final), 18 Jan 62-17 Nov 64,


Corporate Author : ARIZONA STATE UNIV TEMPE


Personal Author(s) : English, F L ; Kevane, C J ; Morrison, J J ; Warmkessel, B M ; Whitehurst, H B


Report Date : 17 Nov 1964


Pagination or Media Count : 81


Abstract : An electrical properties study of semiconducting ceramic rutile is reported, and the mechanism of rectification is discussed. Methods of preparing the semiconducting ceramic are reported. The term ceramic is used here to refer to a polycrystalline material having a density approaching that of a single crystal. The main experimental effort was expended on the preparation and measurement of ceramics made from pure titanium oxide, or from titanium oxide with small amounts of other cations added. A method of preparing the ceramic by the slow dehydration of precipitated TiO2 was developed. In the course of the dehydration, the samples were ignited at a final temperature of 1250 C, with resultant densities of 4.24 to 4.25 g/cu cm, and electrical resistivities ranging downward to 20 ohm cm. The material has the basic crystal structure of rutile. It was concluded that the rectifying diodes formed from semiconducting ceramic rutile may have limited use at room temperature due to rather high forward resistance resulting from use of insulating layers thick enough to provide adequate reverse breakdown voltages. The time dependent changes in resistance should be further investigated. (Author)


Descriptors :   *SEMICONDUCTOR DIODES , RUTILE , SEMICONDUCTORS , RUTILE , CERAMIC MATERIALS , ELECTRICAL RESISTANCE , CAPACITANCE , TIME , TEMPERATURE , FREQUENCY , RECTIFIERS , CRYSTAL STRUCTURE , VOLTAGE , IONS , VANADIUM , MANGANESE , OXIDES , DEHYDRATION , MANUFACTURING , EQUATIONS


Distribution Statement : APPROVED FOR PUBLIC RELEASE