Accession Number : AD0456793


Title :   NON-VACUUM DEPOSITION TECHNIQUES FOR USE IN FABRICATING THIN FILM CIRCUITS


Descriptive Note : Interim engineering rept. no. 2, 1 Oct-31 Dec 1964


Corporate Author : MOTOROLA INC PHOENIX AZ SEMICONDUCTOR GROUP


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/456793.pdf


Report Date : 15 Jan 1965


Pagination or Media Count : 51


Abstract : The causes of instability of gas plated tin oxide resistors have been investigated. It has been found that the nature of the ambient tin oxide interface is the controlling factor which determines the electrical properties of thin (less than 1000 A) resistor films. High temperature stress test has shown that protection of the tin oxide interface by an encapsulating dielectric film is successful in stabilizing the electrical properties of the thin film resistors. A method for the delineation of tin oxide resistors and other hard to fetch materials is described.


Descriptors :   *PRINTED CIRCUITS , THICKNESS , STABILITY , PREPARATION , MATERIALS , THIN FILMS , TIN COMPOUNDS , HUMIDITY , NICKEL COMPOUNDS , VAPOR PLATING , FIXED RESISTORS , ZINC COMPOUNDS , TANTALUM COMPOUNDS , INDIUM COMPOUNDS , TUNGSTEN , NOISE , DIELECTRIC FILMS , DIELECTRIC PROPERTIES , OXIDES , NICKEL


Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE