Accession Number : AD0455750


Title :   STUDIES OF HIGH POWER GAAS LASERS.


Descriptive Note : Semiannual technical summary rept. no. 3, 31 May-31 Dec 64,


Corporate Author : IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY


Personal Author(s) : Title, R S


Report Date : 31 Dec 1964


Pagination or Media Count : 32


Abstract : An evaluation was made of GaAs laser material grown by the Czochralski method and by the horizontal Bridgman technique. Although the best of the Czochralski grown material is as good as that grown by the horizontal Bridgman method, the Bridgman grown material shows far less variability in performance from crystal to crystal than does the Czochralski grown material. Material grown by the Bridgman technique will be used for the remainder of this project. The studies of factors that influence high operation of GaAs lasers has continued. The influence of the geometry on laser performance is considered and theoretical and experimental data are given. Attempts to characterize laser material over smaller dimensions have continued and progress in this effort is reported. (Author)


Descriptors :   CRYSTAL GROWTH , LASERS , GALLIUM COMPOUNDS , ARSENIDES , DIODES , ELECTRIC CURRENT , DIFFUSION , X RAY DIFFRACTION , IMPURITIES


Distribution Statement : APPROVED FOR PUBLIC RELEASE