Accession Number : AD0455565


Title :   RESEARCH ON DIELECTRICS FOR MICROWAVE ELECTRON DEVICES


Descriptive Note : Rept. no. 9 (Final), 1 Jul 1962-30 Sep 1964


Corporate Author : STANFORD RESEARCH INST MENLO PARK CA


Personal Author(s) : Feinstein, L ; Bordeaux, J ; Peters, D ; Pultzer, C


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/455565.pdf


Report Date : Nov 1964


Pagination or Media Count : 122


Abstract : The purpose of this research was to study the properties of dielectrics used in microwave devics with special emphasis on materials used for microwave windows. This report reviews the results of a study of the transport and breakdown properties of aluminum oxide and of methods of growth of this dielectric from the vapor phase in an evacuated system. Growth of aluminum oxide films ranging in thickness from 1000 to 5000 angstroms by five different methods was achieved. Alpha aluminum oxide films were grown by thermal evaporation in the ultrahigh vacuum system. Data from experiments on transport in single crystal sapphire indicate that electron or hole conduction is primarily due to the effect of impurities or defects and, therefore, indicates either an impurity band or hopping process or a polaron conduction mechanism. The data from electron bombardment and breakdown studies indicate that particle bombardment, in addition to creating defects if particle energy is sufficiently high, can also lead to formation of separated charge regions in the material. These regions can act as sources of internal fields within the dielectric.


Descriptors :   *DIELECTRIC FILMS , *DIELECTRICS , *MICROWAVE EQUIPMENT , ALUMINUM COMPOUNDS , CERAMIC MATERIALS , CRYSTAL DEFECTS , CRYSTAL GROWTH , DIELECTRIC PROPERTIES , ELECTRON IRRADIATION , IMPURITIES , IONIZATION , OXIDES , PROCESSING , SAPPHIRE , TEMPERATURE , THICKNESS , TRANSPORT PROPERTIES , VACUUM APPARATUS , WAVEGUIDE WINDOWS


Subject Categories : Electricity and Magnetism


Distribution Statement : APPROVED FOR PUBLIC RELEASE