Accession Number : AD0455160


Title :   LOW-TEMPERATURE PROPERTIES OF GALLIUM ARSENIDE DIODES,


Corporate Author : STANFORD UNIV CA STANFORD ELECTRONICS LABS


Personal Author(s) : Dumin, David J


Report Date : Sep 1964


Pagination or Media Count : 77


Abstract : The forward and reverse current-voltage characteristics of zinc-diffused GaAs diodes were investigated at temperatures between 300 and 4.2 K. This study was initiated to explain the portions of the forward and reverse currents that are nonthermal in origin. Zinc-diffused GaAs diodes were produced and tested at temperatures between 300 and 4.2 K. The doping densities of the parent materials ranged from 5 x 10 to the 15th power cm to 10 to the 19th power cm to the -3rd power. In addition to undoped n-type material, parent materials doped with selenium, sulfur, and tellurium were used. The high-temperature forward current was explained in terms of existing thermal models using minority-carrier lifetimes of the order of 10 to the -9th power to 10 to the -10th power sec, and minority-carrier diffusion lengths of the order of 5 microns. The low-temperature forward current was explained in terms of a band-to-trap-to-band excess tunnelling model describable by two parameters: the effective tunnelling mass and the recombination probability. The reverse current was explained in terms of a band-to-band tunnelling model at all temperatures below 300 K. (Author)


Descriptors :   *SEMICONDUCTOR DIODES , CRYOGENICS , GALLIUM ALLOYS , ARSENIC ALLOYS , ELECTRIC CURRENT , VOLTAGE , ZINC , DIFFUSION , DENSITY , SELENIUM , SULFUR , TELLURIUM , IMPURITIES , TUNNELING(ELECTRONICS) , SPACE CHARGE , SILICON , CAPACITANCE , INJECTION , ELECTRONS , THERMAL PROPERTIES


Distribution Statement : APPROVED FOR PUBLIC RELEASE