Accession Number : AD0453727


Title :   QUANTUM EFFICIENCY AND RADIATIVE LIFETIME IN PTYPE GAAS,


Corporate Author : STANFORD UNIV CALIF STANFORD ELECTRONICS LABS


Personal Author(s) : Vilms,Juri


Report Date : Nov 1964


Pagination or Media Count : 99


Abstract : A method to measure the quantum efficiency of radiative recombination in uniformly doped ptype gallium arsenide and to study the radiative lifetime has been developed. The method involves measurement of the efficiency (photon yield) of photoluminescence, separation of surface recombination from bulk recombination by varying the absorption length of the excitation light, measurement of electron-diffusion length by the spectral dependence of surface photovoltage and also by the absorption-length dependence of photoluminescence, and a theoretical estimate of the electron mobility. The photon yield was determined from measurement of the relative intensities of the excitation light beam and the photoluminescence beam radiated into a known solid angle, using a calculated correction for refraction and reflection losses involved in the escape of luminescence from the sample. (Author)


Descriptors :   *SEMICONDUCTOR DIODES , *GALLIUM ALLOYS , ELECTROLUMINESCENCE , ARSENIC ALLOYS , INTERMETALLIC COMPOUNDS , IMPURITIES , EMISSIVITY , MEASUREMENT , PHOTONS , ELECTRONS , LUMINESCENCE


Distribution Statement : APPROVED FOR PUBLIC RELEASE