Accession Number : AD0451744


Title :   OXIDE SEMICONDUCTOR MATERIALS AND DEVICE RESEARCH.


Descriptive Note : Quarterly progress rept. no. 11, 18 May17 Aug 64,


Corporate Author : ARIZONA STATE UNIV TEMPE


Personal Author(s) : English, F L ; Kevane, C J ; Morrison, J J ; Warmkessel, B M ; Whitehurst, H B


Report Date : 17 Aug 1964


Pagination or Media Count : 20


Abstract : An empirical equation was developed to describe the resistance of semiconducting rutile as a function of time during approach to equilibrium after a heating and rapid cooling. Three constants are involved in the equation, two of which represent the equilibrium resistance of the sample and the initial value of the resistance. The third constant is characteristic of the individual sample and its temperature and has the dimensions of time. Measurement of the change in resistivity for several samples at different temperatures indicated that the value of the constant with the dimension of time is characteristic of a give sample, and that for the same sample a change in value with temperature occurs. Studies were made of the effect of surface treatment on the time dependent resistivity. Measurement of the admittance of diodes made from semiconducting ceramic rutile continue to show agreement with theoretical predictions. (Author)


Descriptors :   *SEMICONDUCTOR DIODES , RUTILE , SEMICONDUCTORS , RUTILE , ELECTRICAL RESISTANCE , HALL EFFECT , ADMITTANCE , TEMPERATURE , FREQUENCY , SURFACE PROPERTIES , CAPACITANCE , DIODES , TIME , EQUATIONS , MATHEMATICAL ANALYSIS , CERAMIC MATERIALS , OXIDES


Distribution Statement : APPROVED FOR PUBLIC RELEASE