Accession Number : AD0447447


Title :   PULSING AND CROSSTALK STUDIES IN SEMICONDUCTOR CIRCUITS.


Descriptive Note : Rept. no. 4 (Final), 15 May 63-14 May 64,


Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY


Personal Author(s) : Lunden, John W


Report Date : 14 May 1964


Pagination or Media Count : 96


Abstract : This report presents the results of a study program which was undertaken to investigate the R.F. pulse power handling capabilities of VHF silicon planar transistors. The basic design factors that limit the peak R.F. pulse power capability are described in detail. Measuring circuits and techniques are developed which will enable the necessary device parameters to be determined. A method is developed to predict the peak R.F. pulse output power for the transistors of interest. This method, in conjunction with the basic limiting design factors, is then utilized to develop a step by step design procedure. This procedure is presented in a systematic manner such that a designer may use the device predictions to design circuits capable of producing the pulse powers predicted. Experimental results are given to illustrate and verify the techniques and predictions, respectively. (Author)


Descriptors :   *TRANSISTORS , RADIOFREQUENCY PULSES , VERY HIGH FREQUENCY , SILICON , RADIOFREQUENCY POWER , CIRCUITS , MEASUREMENT , EXPERIMENTAL DATA , MATHEMATICAL PREDICTION , DISTORTION , TEMPERATURE , VOLTAGE , ELECTRIC CURRENT , STABILITY , ENGINEERING DRAWINGS , TEST EQUIPMENT , ELECTRONIC EQUIPMENT


Distribution Statement : APPROVED FOR PUBLIC RELEASE