Accession Number : AD0447385


Title :   OXIDATION OF CESIUM AT LOW TEMPERATURES AND PRESSURES.


Descriptive Note : Final rept.,


Corporate Author : TENNESSEE UNIV KNOXVILLE


Personal Author(s) : Epperson, J E ; Stansbury, E E


Report Date : Sep 1964


Pagination or Media Count : 1


Abstract : The rate of reaction of Cs with O at reduced pressures, principally in the range of 0.0001 to 0.000001 torr, was measured at 0,-35,-63, and -78C. At O C. the rate of reaction was very sensitive to the O pressure in the range 0.0001 to 0.000001 torr. The initial rates of reaction were about molecule of O striking the surface is absorbed. From the phase diagram of the Cs-Cs2O system, it is predicted that the layer of reaction products at O C is probably composed of a layer of O-rich Cs liquid and a ''crust'' of one or more solid phases. The rate determining step probably was a reaction at the oxide-gas interface, the rate of which was governed by the O pressure. At -35.5 C the rates of reaction were initially about an order of magnitude lower than those observed at O C.; however, after the film had reached a nominal thickness of about 2000 to 3000 angstroms an abrupt increase in the rate was observed. At -63 C. AND -+* C. a continued decrease in rate of reaction was observed. Two survey runs were made at O pressures of 0.01 and 0.5 torr. (Author)


Descriptors :   OXIDATION , CESIUM , CESIUM , OXIDES , ROCKETS


Distribution Statement : APPROVED FOR PUBLIC RELEASE