Accession Number : AD0447260


Title :   INVESTIGATION OF HOT ELECTRON EMITTER.


Descriptive Note : Scientific rept. no. 8, 1 Apr-30 Jun 64,


Corporate Author : HP ASSOCIATES PALO ALTO CA


Personal Author(s) : Atalla, M M


Report Date : 30 Jun 1964


Pagination or Media Count : 22


Abstract : Analysis of the evaporated CdSe films shows that the indium dopant is present in the films at the same concentration as in the source, but that the In is not electrically active. Hall measurements as a function of temperature show activation energies for conduction electron concentration to be from 0.36 to 0.77 eV. The Hall mobility of these films is about 4 sq. cm/V-sec at 25 C and increases with increasing temperature with a constant activation energy, suggesting that electron scattering is dominated by grain boundaries. The studies of the attenuation of hot electrons in gold have been completed. Additional data on optical absorption of very thin gold films on Si substrates show that the initially published value of 740 angstroms for the photoelectric attenuation length is in error, due to the use of absorption data for Au on glass substrates. These data, when corrected with the absorption data for Au on Si, give a value of 332 angstroms for the photoelectric attenuation length in good agreement with our value of angstroms. The resistivity of our thin gold films has also been measured, and these data indicate that the value of 350 angstroms is close to that of perfect gold. (Author)


Descriptors :   *TRANSISTORS , *SEMICONDUCTING FILMS , SEMICONDUCTOR DIODES , PHOTOELECTRIC EFFECT , SILICON , GOLD , CADMIUM ALLOYS , SELENIUM ALLOYS , INDIUM , HALL EFFECT , ELECTRICAL RESISTANCE , PHOTONS , SORPTION , EMISSIVITY , ELECTRONS


Distribution Statement : APPROVED FOR PUBLIC RELEASE