Accession Number : AD0443869


Title :   IMPURITY PROFILE IN THE OXIDE REGION.


Descriptive Note : Final rept., 1 Jan 61-29 Feb 64,


Corporate Author : OHIO STATE UNIV RESEARCH FOUNDATION COLUMBUS


Personal Author(s) : Thurston, M O ; Battocletti, F E


Report Date : 15 Apr 1964


Pagination or Media Count : 63


Abstract : The diffusion of impurities into silicon through an oxide layer was analyzed theoretically to include the effects of oxide growth during diffusion. The problem was reduced to computer programs. Experimental studies of the diffusion of phosphorus by radioactive tracer methods showed that the diffusivity of phosphorus in the oxide is concentration-dependent for concentrations above 10 to the 20th power cm3. It was also found that impurity distributions near the surface of the oxide may be considerably changed by water and acid treatments. (Author)


Descriptors :   *OXIDES , *SILICON , OXIDATION , DIFFUSION , MEASUREMENT , PHOSPHORUS , BORON , DIFFERENCE EQUATIONS , ANTIMONY


Distribution Statement : APPROVED FOR PUBLIC RELEASE