Accession Number : AD0442774


Title :   RESEARCH AND DEVELOPMENT FOR FIELD EFFECT TRIODES AND SPACE CHARGE LIMITED TRIODES.


Descriptive Note : Final rept., 1 Jun 62-31 May 63.


Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY


Personal Author(s) : Blank, J M ; Cahill, A E ; Reinhartz, K K ; Russell, V A ; Tantraporn, W


Report Date : 31 May 1963


Pagination or Media Count : 70


Abstract : Research concerned the theoretical investigation, design, and development of thin film metaldielectric active solid state electronic device with usable power gains that are relatively insensitive to temperature changes. A detailed conduction mechanism for thin-film field effect triodes is presented. New experimental findings which seem to substantiate the trap emptying mechanism are outlined. The results of experiments in varying SiO and CdS thickness in field effect triodes and their effect on device performance are shown. Effects of device aging and electrode configurations on device performance are also discussed. Some theoretical considerations for observation of space charge limited current in CdS films are discussed. The methods of fabrication of SCL devices are presented. (Author)


Descriptors :   *SPACE(ROOM) , TRANSISTORS , TRANSISTORS , DIELECTRIC FILMS , GAIN , POWER , TEMPERATURE , SILICON COMPOUNDS , OXIDES , ZINC COMPOUNDS , THICKNESS , ELECTRODES , CONFIGURATIONS , VACUUM , FIXED CONTACTS , MOLECULAR BEAMS


Distribution Statement : APPROVED FOR PUBLIC RELEASE