Accession Number : AD0442598


Title :   GAAS LASER MATERIALS STUDY.


Descriptive Note : Semiannual technical summary rept., no. 2, 1 Jan-31 May 64,


Corporate Author : IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY


Personal Author(s) : Turner, W J ; Rupprecht, H


Report Date : 31 May 1964


Pagination or Media Count : 30


Abstract : In this report further evidence of crystal defect striations from infrared transmission microscopy is presented. The origin of the striae in Czochralski pulled crystals was traced to the uneven motion of the seed holder as a consequence of the magnetic pulling mechanism. In support of the goal of higher power, higher temperature operation a study of the temperature dependence of laser parameters such as grain per unit length, loss per unit length and threshold current density was undertaken and the results are presented. The effect of competing deep lying recombination centers i.e. Cu was studied. The advantages are explored for the ultimate device objectives of different fabrication techniques such as traveling solvent growth, and combined vapor growth and diffusion techniques for p-n-n structures. (Author)


Descriptors :   *LASERS , *GALLIUM COMPOUNDS , MATERIALS , ARSENIDES , CRYSTAL GROWTH , CRYSTAL DEFECTS , IMPURITIES , LUMINESCENCE , MEASUREMENT , CHROMIUM , MANGANESE , ABSORPTION , VOLTAGE , TIN , SELENIUM , ETCHED CRYSTALS , CRYSTAL GROWTH , INFRARED PHOTOGRAPHY , EPITAXIAL GROWTH , COPPER , HEAT TREATMENT , DIFFUSION , ELECTRICAL RESISTANCE , HALL EFFECT , X RAY DIFFRACTION , TEMPERATURE , PHOTOGRAPHIC ANALYSIS


Distribution Statement : APPROVED FOR PUBLIC RELEASE