Accession Number : AD0442579


Title :   TRANSIENT RADIATION EFFECTS ON HALL DEVICES


Corporate Author : NEW MEXICO UNIV ALBUQUERQUE


Personal Author(s) : Meyer, LeRoy ; Cates, Harold ; Grannemann, W W


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/442579.pdf


Report Date : Jun 1964


Pagination or Media Count : 61


Abstract : A review of the basic theory of Hall effect and Hall effect devices as related to transient radiation effects is presented. The theory predicts that any transient effect in the Hall voltage output during gamma irradiation of the device depends on the type of biasing used. There is no change in Hall voltage output for constant voltage bias, but the Hall voltage varies as a function of 1/n for constant current bias. The transient radiation effects are small and usually within the noise level for dose rates up to 10 to the 7th power r/sec. Some experimental data have been obtained using the AFWL 600-kv flash X ray and WSMR 8-Mev Linac that support the theory. Both thin film and crystal devices were used. The thin film devices appear to have a wider range of frequency response and are more radiation resistant.


Descriptors :   *HALL EFFECT , GAMMA RAYS , MATHEMATICAL ANALYSIS , RADIATION DOSAGE , RADIATION EFFECTS , THIN FILM STORAGE DEVICES , X RAYS


Subject Categories : Electricity and Magnetism


Distribution Statement : APPROVED FOR PUBLIC RELEASE