Accession Number : AD0442070


Title :   HIGH CURRENT AND HIGH VOLTAGE SILICON CONTROLLED RECTIFIERS.


Descriptive Note : Quarterly rept. nos. 6 and 7, 1 Oct 63-31 Mar 64.


Corporate Author : WESTINGHOUSE ELECTRIC CORP WASHINGTON DC


Report Date : 31 Mar 1964


Pagination or Media Count : 43


Abstract : Testing facilities for evaluation of thermal impedance, peak forward drop and 10,000 amperes surge current are described. Transmission electron microscope study on materials under the influence of processing was used to assist process control. Effects of crystal materials on junction characteristics are described. The studies confirm the use of 1.125-inch diameter material as the best choice for the state-of-the-art development. (Author)


Descriptors :   *CRYSTAL RECTIFIERS , ELECTRONIC SWITCHES , SILICON , TEST FACILITIES , TEST EQUIPMENT , ELECTRONIC EQUIPMENT , GALLIUM , CRYSTAL STRUCTURE , DIFFUSION , ALLOYS , SURFACE PROPERTIES


Distribution Statement : APPROVED FOR PUBLIC RELEASE