Accession Number : AD0441646


Title :   THIN FILM IMAGE CONVERTER.


Descriptive Note : Interim technical progress rept. no 4, 24 Jan23 Apr 64,


Corporate Author : HONEYWELL RESEARCH CENTER HOPKINS MN


Personal Author(s) : Kruse, Paul W ; Pribble, Fred C ; Schulze, Richard G


Report Date : 20 May 1964


Pagination or Media Count : 46


Abstract : Details of the fabrication and evaluation of a Zn diffused, Te doped GaP diode are presented. The peak of the spectral emission lies at 7700 A at 297 K for a 200 mu amp bias current. With increasing bias the peak shifts to shorter wavelengths. A shift is also observed at 195 K. When operated at 77 K the spectral peak lies at 6600 A, independent of bias current. The relative intensity at 297 K and 195 K is a superlinear function of bias current at low currents. AT 77 K it is a linear function of current at low currents. GaAs on Ge heterojunctions have been prepared by an open tube technique utilizing a close-spaced transport system. Source and substrate are heated by tungsten lamps. X-ray analyses indicate that the initial growth of GaAs is epitaxial, but as deposition progresses a polycrystalline deposit is formed. A literature survey of the optical properties of GaAsxP1-x has been completed. (Author)


Descriptors :   *IMAGE INTENSIFIERS(ELECTRONICS) , METAL FILMS , ELECTROLUMINESCENCE , ARSENIC ALLOYS , GERMANIUM ALLOYS , GALLIUM ALLOYS , EPITAXIAL GROWTH , PHOSPHORUS ALLOYS , SEMICONDUCTOR DIODES , LUMINESCENCE , ABSORPTION


Distribution Statement : APPROVED FOR PUBLIC RELEASE