Accession Number : AD0439230


Title :   TRANSISTOR, VHF, SILICON, POWER (10W-500MC).


Descriptive Note : Quarterly rept. no. 2, 1 Oct-31 Dec 63,


Corporate Author : TRW SEMICONDUCTORS INC LAWNDALE CALIF


Personal Author(s) : Crishal,J ; Neville,R


Report Date : 31 Dec 1963


Pagination or Media Count : 44


Abstract : A phosphorus oxychloride source is used for n type impurity diffusions, and an n-propyl borate, etch solution has been worked out for P type impurity diffusions. Gold and silver are being evaluated for over-the-oxide metallizing by evaporation. Difficulties in etching the metal between base and emitter stripes have been encountered due to the narrow spacing. A modified disc power package will be used in the fabrication of this device. Initial tests at 250 megacycles indicate good performance. (Author)


Descriptors :   *TRANSISTORS , TRANSISTORS , SILICON , IMPURITIES , DIFFUSION , PROCESSING , MANUFACTURING , METAL COATINGS , GOLD , SILVER , VAPOR PLATING , PHOSPHORUS COMPOUNDS , OXYCHLORIDES , ESTERS , BORATES , SILICATES , EVAPORATION , PHOTOENGRAVING , VERY HIGH FREQUENCY , PYROLYSIS


Distribution Statement : APPROVED FOR PUBLIC RELEASE