Accession Number : AD0438959
Title : ADVANCED FUNCTIONAL ELECTRONIC BLOCK DEVELOPMENT.
Descriptive Note : Interim engineering rept. no. 6, 1 Dec 6329 Feb 64.
Corporate Author : HP ASSOCIATES PALO ALTO CALIF
Report Date : 29 Feb 1964
Pagination or Media Count : 119
Abstract : Significant improvements have been made both in the diffusion process and in the fabrication of ohmic contacts for GaAs el diodes. Effort was devoted to the elucidation of the physics of injection electroluminescence. It was established that a reflection effect accounts for lower energy edge peaks for both diffused and epitaxial diodes, at 300 K and 77 K, respectively. The temperature dependence of the single internal edge band is interpreted with a simple model for radiative recombination involving transitions to both holes and acceptors on the p-side. Models for each of the components of the forward current are given and compared with experiment. The dependence of quantum efficiency on current is explained, and efficiency and lifetime are found to be proportional. Photoluminescence of n-type starting material is correlated with the EL efficiencies of diffused diodes, and photoluminescence is measured as a function of depth into the diffused p-skin. (Author)
Descriptors : *PHOTOELECTRIC CELLS(SEMICONDUCTOR) , *SEMICONDUCTOR DIODES , ELECTROLUMINESCENCE , SEMICONDUCTOR DIODES , ELECTROLUMINESCENCE , GALLIUM ALLOYS , ARSENIC ALLOYS , CONFIGURATIONS , GAIN , FIBER OPTICS , MANUFACTURING , TUNNELING(ELECTRONICS) , SOLID STATE PHYSICS , LIFE EXPECTANCY(SERVICE LIFE) , SPECTROSCOPY , TRANSISTORS , LASERS , MODULES(ELECTRONICS) , CRYSTAL STRUCTURE , PRODUCTION
Distribution Statement : APPROVED FOR PUBLIC RELEASE