Accession Number : AD0438935


Title :   MEASUREMENT OF THE TEMPERATURE DEPENDENCE OF MINORITY-CARRIER MOBILITY IN A TRANSISTOR-BASE REGION,


Corporate Author : STANFORD UNIV CA STANFORD ELECTRONICS LABS


Personal Author(s) : Shao, Tzu-Fann


Report Date : Dec 1963


Pagination or Media Count : 30


Abstract : A method of measuring the temperature dependence of minority carriers in a transistor base is developed. The method is based on the observations that the short-circuit collector current of a transistor in a common-base configuration depends exponentially on the emitter voltage over several decades of collector current, and the temperature dependence of mobility has the empirical form mu is approximately equal to T to the a, where a, the temperature dependence parameter, is a constant. From these two observations a differential relation can be obtained which relates the parameter a to the extrapolated zero-temperature energy gap Vgo of the semiconductor, the emitter voltage Ve and the temperature derivative of the emitter voltage V' sub e at a temperature T. From measurements of Ve, V' sub e, T and the published value of Vgo, one can calculate the temperature-dependence parameter a from the differential relation. Calculations from the experimental data have yielded a weaker temperature dependence for the minority-carrier mobility in a transistor base than that in the bulk semiconductor. The weaker temperature dependence is correlated with the high dislocation count observed on the transistor. (Author)


Descriptors :   *TRANSISTORS , TEMPERATURE , ELECTRONS , ELECTRODES , ELECTRIC CURRENT , VOLTAGE , TRANSPORT PROPERTIES , DIFFUSION , MEASUREMENT


Distribution Statement : APPROVED FOR PUBLIC RELEASE