Accession Number : AD0438515


Title :   P-N JUNCTION FORMATION TECHNIQUES.


Descriptive Note : Quarterly technical progress rept. no. 2, 2 Jan2 Apr 64.


Corporate Author : ION PHYSICS CORP BURLINGTON MASS


Report Date : 02 Apr 1964


Pagination or Media Count : 86


Abstract : During the second quarter, the ion implantation apparatus was finished and tested using a variety of ion sources and feed gas combinations. While a high current source (100 microamps) was being developed, a radio frequency type ion source was used to obtain a phosphorus beam for cell production. Samples produced with this system were used to conduct extensive investigations on impurity motion, enhanced diffusion, profiles, annealing effects and leakage mechanisms. Results and conclusions of these investigations were partially tested by fabrication of cells. Cell (N on P) efficiencies varied from 6.2 to 9.3% with equal photon spectral response curves peaking as low as 5600 angstroms. Plasma deposition studies were conducted using two difference deposition sources and vacuum systems. Operation of the larger of these sources was investigated in detail, and a well controlled deposition mode for silicon was found. Silicon films (up to 6 microns thick) deposited on mica were quite uniform with very high resistivities (about 500 megohms/square). Post deposition thermal treatment and diffusion have been tried with these films to investigate film quality and junction formation. (Author)


Descriptors :   *SEMICONDUCTORS , SCIENTIFIC RESEARCH , IONS , GASES , ELECTRIC CURRENT , RADIOFREQUENCY , PHOSPHORUS , MASS SPECTROSCOPY , CRYSTALS , THIN FILM STORAGE DEVICES , IMPURITIES , SPECTROSCOPY , PLASMAS(PHYSICS) , MASS SPECTRA


Distribution Statement : APPROVED FOR PUBLIC RELEASE