Accession Number : AD0438192


Title :   A 10-MW, X-BAND TUNNEL-DIODE OSCILLATOR.


Descriptive Note : Quarterly progress rept. no. 2, 1 Oct-31 Dec 63,


Corporate Author : RADIO CORP OF AMERICA HARRISON N J


Personal Author(s) : Diamond,E ; Casterline,E ; Gold,R ; Nelson,D


Report Date : 31 Dec 1963


Pagination or Media Count : 36


Abstract : GaAs tunnel diodes with peak currents of 50 ma, junction capacitances of 4 pF and series resistances of 1.16 ohms were tested in stripline circuits and gave 1.0 mw of rf power at 8.5 Gc. Theoretical calculations indicate that this is close to optimum performance. One hundred ma tunnel diodes were fabricated and power outputs of 2.0 mw were obtained at 6.5 Gc. The theoretical analysis presented indicates that with proper loading, it is possible to get 3.6 mw at 8.5 Gc. Optimum loading conditions for this type of diode are therefore being investigated.


Descriptors :   TUNNEL DIODES , X BAND , CAPACITANCE , ELECTRICAL RESISTANCE , RADIOFREQUENCY POWER , GALLIUM ALLOYS , ARSENIC ALLOYS , CHEMICAL PROPERTIES , TIN , SILICON COMPOUNDS , OXIDES , VOLTAGE , FREQUENCY


Distribution Statement : APPROVED FOR PUBLIC RELEASE