Accession Number : AD0437344


Title :   STUDY OF SURFACE STATES IN SEMICONDUCTORS.


Descriptive Note : Quarterly rept. no. 2,


Corporate Author : TYCO LABS INC WALTHAM MASS


Personal Author(s) : Rupprecht ,G ; Gilbert ,J ; Bergeman,T H


Report Date : Mar 1964


Pagination or Media Count : 19


Abstract : Surface states on GaAs have been studied by the pulsed field effect experiment. The surfaces under investigation were (111) surfaces, the so called A and B surfaces which are terminated by gallium and arsenic, respectively. With zincdoped P-type GaAs, a surface state was found to on the B surface 0.53 eV above the valence band with a capture cross-section for holes of about 3 x 10 -12th power sq, which is indicative of an acceptor state. (Author)


Descriptors :   *CONDUCTIVITY , SURFACE PROPERTIES , ZINC , ELECTRON CAPTURE , TEMPERATURE , SILICON , OXIDES , VOLTAGE , ELECTRICAL RESISTANCE , ETCHED CRYSTALS


Distribution Statement : APPROVED FOR PUBLIC RELEASE