Accession Number : AD0436433


Title :   TRANSISTOR, VHF, SILICON, POWER (50W - 105MC).


Descriptive Note : Quarterly rept. no. 1, 1 July-30 Sep 63,


Corporate Author : TRW SEMICONDUCTORS LAWNDALE CA


Personal Author(s) : Preletz, M ; Tillung, K ; Moreno, E


Report Date : 30 Sep 1963


Pagination or Media Count : 38


Abstract : The original design proposed on this contract was a stripe structure in a spiral configuration. The assembly and large area problems associated with the spiral configuration were straining present technology to a degree where a new configuration was necessary. The new design consists of 72 separate transistor cells connected in parallel by evaporated contacts. Diffusion and photoresist laboratory areas have been established and a set of processes have been put into operation. These processes are presently being adjusted to insure compatibility with the 50 watt device. Processing of initial samples of the 72 cell Double-Interrupted Emitter Structure has yielded the required number of units for the first six state-of-the-art devices. The 3/4 in. Disc Package was chosen for this device because of its better high-frequency characteristics and availability. Other problems in emitter diffusion and contact metallizing have been detailed and concentration of effort is in this direction. (Author)


Descriptors :   *VERY HIGH FREQUENCY , SILICON , TRANSISTORS , POWER , CONFIGURATIONS , PRODUCTION , MANUFACTURING , DIFFUSION , PHOTOENGRAVING , PACKAGED CIRCUITS , ELECTRIC TERMINALS


Distribution Statement : APPROVED FOR PUBLIC RELEASE