Accession Number : AD0434820


Title :   THE DESIGN OF WIDEBAND TRANSISTOR AMPLIFIERS BY AN EXTENSION OF THE SAMPLED-PARAMETER TECHNIQUE


Descriptive Note : Technical rept.


Corporate Author : STANFORD UNIV CA STANFORD ELECTRONICS LABS


Personal Author(s) : Danon, G ; Sorenson, K


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/434820.pdf


Report Date : Nov 1963


Pagination or Media Count : 59


Abstract : The experiments conducted in nuclear physics laboratories often require the design of fastpulse amplifiers. Recent transistors offer new capabilities in this field. The work presented here centers on the design of such amplifiers by the sampled-parameter technique, in which the transistor is characterized by two-port parameters measured at a set of frequencies through the frequency band of interest. The feedback and coupling networks are selected by computations based on these sampled parameters. An application of this technique has led to an iterative stage using a 2N918 transistor.


Descriptors :   *TRANSISTOR AMPLIFIERS , BROADBAND , PHOTOMULTIPLIER TUBES , ULTRAHIGH FREQUENCY , COUPLING CIRCUITS , FEEDBACK , PULSE AMPLIFIERS


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE