Accession Number : AD0434809


Title :   RESEARCH IN ELECTRON EMISSION FROM SEMICONDUCTORS


Descriptive Note : Quarterly rept. no. 3, 1 Nov 63-31 Jan 64,


Corporate Author : DAVID SARNOFF RESEARCH CENTER PRINCETON NJ


Personal Author(s) : Simon, R E


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/434809.pdf


Report Date : 11 Feb 1964


Pagination or Media Count : 50


Abstract : Experiments directed toward producing a clean surface on silicon by means of vacuum etching using HF molecules directed at silicon with oxide surfaces are reported. Results indicate that this treatment, along with moderate heat treatment, can produce increased hot electron emission. A new method of mounting silicon hot electron emitters is described which is designed to minimize breakage of these fragile devices. Preliminary measurements of spectral distribution of light emitted from reverse biased silicon p-n junctions are reported. Evidence for a negative electron affinity in GaP based on measurements of the spectral response of photoemission and the kinetic energy distribution of photoemitted electrons from heavily zinc doped GaP treated with cesium is reported.


Descriptors :   *SEMICONDUCTOR DIODES , *LASERS , *EMISSIVITY , ETCHED CRYSTALS , PHOTONS , HEAT , GALLIUM ALLOYS , PHOSPHORUS ALLOYS , OXIDES , ELECTRONS , TEMPERATURE , SILICON


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE