Accession Number : AD0434747


Title :   HIGH POWER SEMICONDUCTOR PHASE SHIFTING DEVICES.


Descriptive Note : Quarterly progress rept. no. 8, 1 Oct-30 Dec 63,


Corporate Author : MICROWAVE ASSOCIATES INC BURLINGTON MASS


Personal Author(s) : White,Joseph F


Report Date : Mar 1964


Pagination or Media Count : 30


Abstract : The general properties of the transmission phase shifter circuit mode are described, and analytic relationships are quoted which may be used for calculating phase shift and transmission match. A geometric description of both transmission phase states of the circuit is developed and used to define the accuracy of a convenient approximate formula for phase shift calculations. The results of an S-band experimental diode phase shifter yielding O to 22 degree phase shift in two 11 degree steps and having a peak RF burnout power capability of 37 kilowatts at 1 microsecond pulse length and 0.001 duty cycle are described in detail. (Author)


Descriptors :   PHASE SHIFT CIRCUITS , SEMICONDUCTOR DIODES , STANDING WAVE RATIOS , S BAND , TRANSMISSION LINES , MATHEMATICAL ANALYSIS


Distribution Statement : APPROVED FOR PUBLIC RELEASE