Accession Number : AD0434553


Title :   AN L-BAND TUNNEL DIODE OSCILLATOR.


Descriptive Note : Quarterly progress rept. no. 6, 1 Sep-30 Nov 63,


Corporate Author : RADIO CORP OF AMERICA HARRISON N J


Personal Author(s) : Nelson,D E ; Gold,R ; Casterline,E T


Report Date : 30 Nov 1963


Pagination or Media Count : 20


Abstract : Work continued on the development of distributed junction diodes. Annular junction diodes were successfully fabricated; however, higher carrier concentrations in the semiconductor material is needed to give lower diode capacitance and higher cut-off frequency. The second prototype oscillator model was delivered and the third prototype was tested and delivered. This third prototype oscillator gave a power output of 19 mw and easily met the = 2 Mc maximum frequency variation for = 10% chan.e in bias voltage.


Descriptors :   *TUNNEL DIODES , L BAND , OSCILLATORS , OSCILLATORS , POWER , TEMPERATURE , TRANSISTORS , PRODUCTION , MANUFACTURING , PERFORMANCE(ENGINEERING) , VOLTAGE REGULATORS , SOLDERING , GALLIUM ALLOYS , ARSENIC ALLOYS


Distribution Statement : APPROVED FOR PUBLIC RELEASE