Accession Number : AD0434100


Title :   FIELD EFFECT + SPACE-CHARGE-LIMITED THIN FILM TRIODES.


Descriptive Note : Quarterly rept. no. 2, 1 Oct-31 Dec 63,


Corporate Author : RADIO CORP OF AMERICA CAMDEN NJ DEFENSE ELECTRONIC PRODUCTS


Personal Author(s) : Bowe, J J ; Laznovsky, W H ; Shallcross, F V ; Weimer, P K


Report Date : 30 Jan 1964


Pagination or Media Count : 39


Abstract : Work was performed on thin-film transistors of the field effect type, both from a device viewpoint and from a materials aspect. Emphasis was placed on an intensive study of the shelf and operating lives of CdS thin-film transistors, with a view toward isolating and identifying the failure mechanisms and the technological factors contributing to the failure. (Author)


Descriptors :   *MATERIALS , *LIFE EXPECTANCY(SERVICE LIFE) , TRANSISTORS , TRANSISTORS , SEMICONDUCTING FILMS , TRANSISTORS , CADMIUM ALLOYS , SULFIDES , FAILURE(MECHANICS) , STABILITY , MANUFACTURING , CAPACITORS , ENCAPSULATION , VACUUM


Distribution Statement : APPROVED FOR PUBLIC RELEASE