Accession Number : AD0433975


Title :   SEMICONDUCTOR DEVICE CONCEPTS.


Corporate Author : GENERAL ELECTRIC CO SCHENECTADY N Y


Report Date : 31 Jan 1964


Pagination or Media Count : 55


Abstract : Halogen transport synthesis of GaAs(x)P(l-x) was studied using a rotating tube vertical furnace. Laser quality material was produced using Te and Si as the donor impurities, and the homogeneity was improved. Measurements of composition, carrier concentration, and optical transparency are reported. A red-black effect was discovered which is helpful in selecting laser quality regions from GaAs(l-x)P(x) ingots having compostions near the direct-indirect limit. The growth of GaAs(l-x)P(x) from Ga solutions continued. The growing procedure was modified in a way that is expected to yield material of uniform composition. Further attempts to produce coherent light emission from GaSb and from Ga(x)In(l-x)Sb junctions was unsuccessful and this work has been discontinued. (Author)


Descriptors :   CALCIUM ALLOYS , ARSENIC ALLOYS , CRYSTAL GROWTH , ELECTROCHEMISTRY , ELECTROLUMINESCENCE , PHOSPHORUS ALLOYS


Distribution Statement : APPROVED FOR PUBLIC RELEASE