Accession Number : AD0433828


Title :   VACUUM EVAPORATED AND CATHODIC SPUTTERED THIN FILMS,


Corporate Author : GENERAL DYNAMICS/POMONA CALIF


Personal Author(s) : Krikorian,E ; Sneed,R J ; Chen,P ; Berson,B


Report Date : Mar 1964


Pagination or Media Count : 82


Abstract : The effects of formation conditions on the epitaxial growth of thin films deposited by cathodic sputtering and vacuum evaporation are reported. The primary condition parameters considered are substrate temperature and rate of deposition. Trends have also been established for the effect of thickness, annealing and residual gas pressure. The results of a detailed investigation of Ge sputtered onto single crystal Ge, both (111) and (100), and (111) CaF2, are presented. Less detailed, but consistent results were obtained for identical film-substrate systems obtained by vacuum deposition. Data are also included for Ge deposited on single crystal Si, mica, amorphous quartz and glass. Other film-substrate systems considered include gold on rock salt and glass, silver on rock salt, and Si on Si. (Author)


Descriptors :   EPITAXIAL GROWTH , THIN FILMS , VACUUM , EVAPORATION , GERMANIUM , GOLD , GASES , PRESSURE , MICA , HALL EFFECT , DIFFRACTION ANALYSIS , TRANSITION TEMPERATURE


Distribution Statement : APPROVED FOR PUBLIC RELEASE