Accession Number : AD0433710


Title :   PRODUCTION DEVELOPMENT OF A SILICON PLANAR EPITAXIAL TRANSISTOR WITH A MAXIMUM OPERATING FAILURE RATE OF 0.001% PER 1000 HOURS AT A CONFIDENCE LEVEL OF 90% AT 25 C.


Descriptive Note : Quarterly rept. no. 5, 1 May-31 Jul 63,


Corporate Author : MOTOROLA INC PHOENIX ARIZ


Personal Author(s) : Greer,Paul


Report Date : 31 Jul 1963


Pagination or Media Count : 22


Abstract : Efforts continued on a program to improve production techniques for the type 2N696 silicon epitaxial transistor. The power step-stress, operating life, and environmental testing of the Al-Al-Au metallization process are covered and the results compared with the older metallization processes. An acceleration factor was determined between step-stress levels and the level for which the .001%/1000 hours objective was established. (Author)


Descriptors :   *TRANSISTORS , EPITAXIAL GROWTH , SILICON , MANUFACTURING , PRODUCTION , POWER , LIFE EXPECTANCY(SERVICE LIFE) , ENVIRONMENTAL TESTS , ALUMINUM , GOLD , ALUMINUM COATINGS , VOLTAGE


Distribution Statement : APPROVED FOR PUBLIC RELEASE