Accession Number : AD0433654


Title :   PEM FOR TRANSISTOR MANUFACTURING PROCESS IMPROVEMENT.


Descriptive Note : Final progress rept., 30 Apr 62-31 Dec 63,


Corporate Author : PHILCO CORP LANSDALE PA


Personal Author(s) : Sanders,J G


Report Date : 31 Dec 1963


Pagination or Media Count : 210


Abstract : The work for reliability improvement of the jet etch type transistor through process improvements is complete. The report includes the over-all processing specification for the improved transistor, and the applicable Inspection and Quality Control Plan. Data are given on the final test lot of the improved device and indicate the Lot Acceptance Test was passed. The method devised for accelerated testing and extrapolation of reliability levels under use conditions was effectively demonstrated. Accumulated data on transistors produced using the improved processes show that an acceleration curve having a slope equivalent to an activation energy of 19.6 Kcal/mole is realistic for the improved device. Thermal resistance measurement studies showed that the d-c beta method of test with voltage compensation gives results that are reproducible and closely approach the values of effective thermal resistance determined from operating and storage life tests. The maximum operating rating of the improved transistor is reported as 150 mw at 25 C at a lambda = 0.7%. (Author)


Descriptors :   *TRANSISTORS , *SPECIFICATIONS , PROCESSING , GERMANIUM , ELECTRODES , NICKEL , TIN ALLOYS , ZINC ALLOYS , GALLIUM ALLOYS , HEAT RESISTANT ALLOYS , HEAT RESISTANT METALS , DEGASIFICATION , ENCAPSULATION , EMISSIVITY , COATINGS , MASS SPECTROSCOPY , TEST METHODS , LIFE EXPECTANCY(SERVICE LIFE) , QUALITY CONTROL


Distribution Statement : APPROVED FOR PUBLIC RELEASE