Accession Number : AD0433232
Title : VAPOR PHASE GROWTH OF SINGLE CRYSTALS.
Descriptive Note : Final rept. 1 Nov 62-31 Dec 63,
Corporate Author : LEXINGTON LABS INC CAMBRIDGE MA
Personal Author(s) : Schaffer, Philip S.
Report Date : JAN 1964
Pagination or Media Count : 47
Abstract : A chemical vapor deposition process was developed for epitaxial growth of sapphire single crystals. Apparatus was designed and c6nstructed for use in the crystal growth process. Oriented crystals weighing up to five grams were grown at temperatures considerably below the melting point. The rate of growth for constant gas compositions and flow rates was found to increase with an increase in temperature. pp Etch pit studies showed an average dislocation density of 100 dislocations sq cm. Spectrochemical analyses incicated total impurity levels below 40 ppm. (Author)
Descriptors : *CRYSTAL GROWTH, *VAPOR PLATING, SINGLE CRYSTALS, EPITAXIAL GROWTH, ETCHED CRYSTALS, SAPPHIRE, CRYSTAL DEFECTS, SYMMETRY(CRYSTALLOGRAPHY), SPECTROSCOPY, CHEMICAL ANALYSIS, QUARTZ, TEMPERATURE, VACUUM FURNACES, X RAY DIFFRACTION, REFRACTIVE INDEX, IMPURITIES, MAGNESIUM, ALUMINUM, CALCIUM, MANGANESE, IRON, NICKEL, SILVER, LEAD(METAL), INJECTORS, EVAPORATORS, THERMODYNAMICS.
Subject Categories : CRYSTALLOGRAPHY
Distribution Statement : APPROVED FOR PUBLIC RELEASE