Accession Number : AD0432325


Title :   PRODUCTION RELIABILITY IMPROVEMENT PROGRAM FOR GERMANIUN TRANSISTOR 2N1430.


Descriptive Note : Final rept. 30 Apr 62-31 Oct 63,


Corporate Author : BENDIX CORP HOLMDEL N J BENDIX SEMICONDUCTOR DIV


Personal Author(s) : Nussear,John ; Sivik,Henry ; Szafranski,John


Report Date : 31 Oct 1963


Pagination or Media Count : 125


Abstract : This Production Engineering Measure has established the capability of manufacturing an improved version of the 2N1430 Germanium Diffused Alloy Power Transistor with very satisfactory yields. The improved techniques have resulted in a reliable product which satisfies the objective failure rate of 0.05%/1000 hours with 90% confidence. The estimate of failure rate after incorporation of the various production improvements was less than 0.01%1000 hours. All required samples have been delivered, all production equipment modifications completed and appropriate quality and reliability testing performed to demonstrate the success of the operation. (Author)


Descriptors :   MANUFACTURING , TRANSISTORS , GERMANIUM , PRODUCTION , RELIABILITY(ELECTRONICS) , ELECTRICAL RESISTANCE , CRYSTAL GROWTH , CHEMICAL MILLING , DIFFUSION , ALLOYS , SPECIFICATIONS , PROCESSING , INDUSTRIAL EQUIPMENT


Distribution Statement : APPROVED FOR PUBLIC RELEASE