Accession Number : AD0432212


Title :   ENGINEERING SERVICES ON TRANSISTORS.


Descriptive Note : Quarterly progress repts. no. 2 and 3, 1 July30 Sep 63,


Corporate Author : BELL TELEPHONE LABS INC WHIPPANY N J


Personal Author(s) : Arnold,S R ; D'Stefan,D J ; Foxhall,G F ; Iwersen,J E ; Kocsis,J


Report Date : 30 Dec 1963


Pagination or Media Count : 80


Abstract : Efforts were continued on studies and investigations related to transistors and transistorlike devices, with a view toward demonstrating and increasing the practicability of their use in operating equipment. A discussion is given of work on a 1-Gc, 1-watt germanium transistor and a 6-Gc low-power germanium transistor and integrated circuit devices. The status of the work on the germanium microwave transistors is discussed. Techniques and problems related to the oxide-photoengraved planar transistor structure fabrication are covered. A new method of determining emitter depletion layer capacitance is described and experimental results given. Results of a calculation of effective mobility and diffusion coefficient for electrons and holes in germanium are given which will permit more accurate estimates of base transit time and base resistance of high-frequency transistors. The integration of a small part of a high-speed general purpose military computer is described. DCTL was used and 4- to 5-ns propogation delay was obtained. (Author)


Descriptors :   *INTEGRATED CIRCUITS , GERMANIUM , TRANSISTORS , ULTRAHIGH FREQUENCY , SUPERHIGH FREQUENCY , OXIDES , ELECTRODES , CAPACITANCE , DIFFUSION , ELECTRONS , ELECTRICAL RESISTANCE , COMPUTERS , PHOTOENGRAVING , MANUFACTURING , FIXED CONTACTS , COMPUTER LOGIC , SURFACE PROPERTIES , BONDING , SILVER , ALUMINUM


Distribution Statement : APPROVED FOR PUBLIC RELEASE