Accession Number : AD0431756
Title : 500 WATT SILICON POWER TRANSISTOR.
Descriptive Note : Quarterly rept. no. 2, 31 Oct 63-30 Jan 64.
Corporate Author : WESTINGHOUSE ELECTRIC CORP WASHINGTON D C
Report Date : 30 Jan 1964
Pagination or Media Count : 35
Abstract : Efforts were continued on the development of 500watt silicon power transistors. The studies pointed to two general areas in controlling secondary breakdown: (1) to provide control of thermal runaway and structural advantage for best heat transfer; and (2) to provide minimum probability of generating non-uniform current distribution and thereby hot spots. Two testing methods and equipment for each were completed and put into operation. These testers, in conjunction with the present power test method, cover both the transient and steady-state operation of a device. They now allow an adequate measure of the device capability. Device design calculations were made using both manual and computer methods. Initial checks on junction characteristics were made. Preliminary design of the encapsulation was made. The dimensions, however, are not scheduled to be finalized until the device design is completed. (Author)
Descriptors : *TRANSISTORS , SILICON , TEST EQUIPMENT , VOLTAGE , POWER , ELECTRODES
Distribution Statement : APPROVED FOR PUBLIC RELEASE