Accession Number : AD0431117


Title :   Transistor, VHF Silicon Power (5W)


Descriptive Note : Final progress rept. 1 July-30 Nov 1963


Corporate Author : RADIO CORP OF AMERICA SOMERVILLE NJ


Personal Author(s) : McGeough, P L


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/431117.pdf


Report Date : 30 Nov 1963


Pagination or Media Count : 144


Abstract : An improved ultrahigh frequency transistor structure, called the overlay structure, has been designed which results in high emitter periphery to emitter area and emitter periphery to base area ratios. This structure incorporates many small individual sites to make up the necessary emitter periphery rather than a few continuous stripes as in the interdigitated structure. Difficulties associated with the fabrication of this device resulted in the design of a diffused overlay structure which retains the advantages of the original device but reduces fabrication problems. Experimental studies associated with the development of this device have resulted in significant state-of-the art advances in the techniques of photomask fabrication, photolithography and diffusion. Two hundred final transistors were submitted to the Contracting Agency. Power gain measurements of these devices, using a 500 megacycle Class C amplifier employing tuned lines, resulted in approximately 3.4 to 5.4 watts output. The median device had a power gain of 6.0 db at 4.0 watts output power.


Descriptors :   *TRANSISTORS , ALUMINUM COMPOUNDS , CAPACITANCE , DIFFUSION , GAIN , MANUFACTURING , METAL FILMS , OXIDES , PHOTOENGRAVING , SILICON , TEMPERATURE , ULTRAHIGH FREQUENCY , VERY HIGH FREQUENCY , VOLTAGE


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE