Accession Number : AD0430696


Title :   INJECTION LASER STUDY.


Descriptive Note : Quarterly progress rept. no. 2, 1 Sep-30 Nov 63,


Corporate Author : IBM WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y


Personal Author(s) : Lasher,G J ; Stern,F ; Weiser,K


Report Date : 30 Nov 1963


Pagination or Media Count : 58


Abstract : A bistable device, whose two stable states are a lasing state and a state with only spontaneous emission, both for the same current through one of two separated contracts to the p-type side of a p-n junction, was shown to be feasible. Calculations for several models of absorption and emission spectra show the device to be bistable when the area of the low-current contact is greater than the area of the high-current contact. An approximate method for determining the far-field emission pattern perpendicular to the junction plane for the lasing modes has been found. Lasing has been seen for the first time in double-diffused Mn- and Zn-doped GaAs diodes, whose negative resistance was reported previously. The threshold densities at 77 K were 5000A/cm sq and higher. (Author)


Descriptors :   *LASERS , INJECTION , EMISSIVITY , EXPERIMENTAL DATA , DIFFUSION , MANGANESE , ZINC , GALLIUM , SEMICONDUCTOR DIODES , ELECTRICAL RESISTANCE , DENSITY , LOW TEMPERATURE , SCIENTIFIC RESEARCH , RARE EARTH COMPOUNDS


Distribution Statement : APPROVED FOR PUBLIC RELEASE