Accession Number : AD0429903


Title :   HIGH ELECTRIC FIELD EFFECTS IN P-N JUNCTIONS. FAST BREAKDOWNS,


Corporate Author : ILLINOIS UNIV URBANA DIGITAL COMPUTER LAB


Personal Author(s) : VAN Biljon,L


Report Date : 20 Jan 1964


Pagination or Media Count : 70


Abstract : The transit time of electrons across a p-n junction in which an electric field of 10 times v/m is present is investigated and proven to be about l picrosecond. It is shown that carrier distribution adds about 25 per cent to this time when a pulse is considered and that increasing the applied voltage does not necessarily decrease the transit time. The energy exchange between electric field, carriers, and lattice is investigated and a cause of random pulse formation suggested from the results. Experimental results are presented, obtained on Si junctions in which breakdowns occur. It is suggested that small breakdowns are established at speeds too fast for conventional oscilloscopes of sufficient sensitivity. It is proposed that the experimental technique of photon stimulation used here be further refined to allow the display of the true waveshape in time of microplasma breakdown. (Author)


Descriptors :   *SWITCHING CIRCUITS , SILICON , CYCLOTRON RESONANCE , CAPACITANCE , PHONONS , ELECTRICAL RESISTANCE , OSCILLOSCOPES , THERMAL CONDUCTIVITY , CRYSTAL LATTICES , SCATTERING , TRANSPORT PROPERTIES , TEMPERATURE , PHOTONS , EMISSIVITY


Distribution Statement : APPROVED FOR PUBLIC RELEASE