Accession Number : AD0429319
Title : 500 WATT SILICON POWER TRANSISTOR.
Descriptive Note : Quarterly rept. no. 1, 31 July-30 Oct 63.
Corporate Author : WESTINGHOUSE ELECTRIC CORP WASHINGTON D C
Report Date : 30 Oct 1963
Pagination or Media Count : 1
Abstract : A method of testing power transistors for secondary breakdown behavior is described. Test results obtained on transistors manufactured by several different processes are discussed. It was found that secondary breakdown occurs in the collectorbase connection as well as in the collectoremitter mode. Test results are analyzed in terms of junction breakdown, avalanche-limited and punch-through limited transistor breakdown, and thermal runaway. Approaches to design of the subject transistor are evolved from consideration of test results. (Author)
Descriptors : *SILICON , *TEST METHODS , POWER , TRANSISTORS , TRANSISTORS , STABILITY , FREQUENCY , VOLTAGE , MEASURING INSTRUMENTS , ELECTRIC CURRENT , TEMPERATURE
Distribution Statement : APPROVED FOR PUBLIC RELEASE