Accession Number : AD0428999


Title :   HIGH EFFICIENCY SILICON SOLAR CELLS.


Descriptive Note : Quarterly progress rept. no. 5, 15 June-15 Sep 63,


Corporate Author : TEXTRON ELECTRONICS INC SYLMAR CALIF HELIOTEK DIV


Personal Author(s) : Berman,Paul A


Report Date : Oct 1963


Pagination or Media Count : 1


Abstract : Some dditional statistical analyses of the first N(+)P bivariable experiment were made. The variance on this experiment was greater from run to run than within a run, at any given design point. A preliminary statistical experiment was performed on N(+)P cells having between 5 and 27 grid lines with diffusion times of 20 and 80 minutes. Half the cells were coated with SiO while half were not. Experimental results showed a flat optimum between 9 and 18 grid lines, and between the diffusion times of 20 and 80 min. With regard to the latter variable, the relative insensitivity of N(+)P cell efficiencies, as compared to P(+)N cell efficiencies, with variation of junction depth was again observed, and this insensitivity caused some difficulty in determining a clear superiority of one diffusion time over the other due to the masking effects of other variables. Cells having total cell series resistances of less than 0.20 ohms were fabricated. Polycrystalline cells showed sunlight conversion efficiencies of as high as 11%. (Author)


Descriptors :   *ENERGY CONVERSION , SILICON , SOLAR CELLS , SOLAR CELLS , CRYSTALS , DIFFUSION , COATINGS , SILICON COMPOUNDS , OXIDES , ELECTRICAL RESISTANCE , STATISTICAL ANALYSIS


Distribution Statement : APPROVED FOR PUBLIC RELEASE