Accession Number : AD0428994


Title :   INVESTIGATION OF TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS.


Descriptive Note : Quarterly progress rept. no. 2, 1 May-31 July 63,


Corporate Author : RENSSELAER POLYTECHNIC INST TROY NY


Personal Author(s) : Lichtenstein, Roland M


Report Date : 31 Jul 1963


Pagination or Media Count : 4


Abstract : The efect of X-ray flashes (produced by the Linac) on small silicon samples was examined. The amplifier and associated shielded cables performed as expected. Coincident with the X-ray flash, the electrical conductance of the silicon sample increased suddenly and then returned to its normal value with a relaxation time of about five microseconds. (Author)


Descriptors :   DAMAGE , SEMICONDUCTORS , RADIATION EFFECTS , TRANSIENTS , MATERIALS , X RAY FLASH , SILICON , AMPLIFIERS , SHIELDING , ELECTRIC CABLES , ELECTRICAL CONDUCTIVITY , RELAXATION TIME


Distribution Statement : APPROVED FOR PUBLIC RELEASE